SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced its next-generation memory and storage plans aimed at AI infrastructure during the 2026 OCP Global Summit. The event, held in San Jose, California from October 12 to 15, saw the company detail its three main technological directions, which include high-performance memory, Compute Express Link-based memory expansion, and advanced solid-state drives. Additionally, Samsung announced a collaborative CXL demonstration with Advanced Micro Devices. The overarching goal of this strategy is to address memory bottlenecks hindering larger AI workloads.
Samsung centered its approach around enhancing speed, expanding memory scalability, and ensuring data persistence. Its first pillar emphasizes high-performance memory, with the company showcasing customized high-bandwidth memory alongside HBM5, its eighth-generation HBM. The second pillar leverages CXL to augment memory capacity beyond what each server can traditionally support. The third pillar targets data storage and management through next-generation enterprise SSDs and advanced storage software. Samsung asserts that these three components work synergistically to boost overall AI system efficiency.
The company linked this strategy to the increasing memory requirements driven by AI inference workloads and larger models. As models grow, they generate more data during inference, demanding greater memory capacity. Current server designs often restrict the amount of memory accessible to each processor. Samsung proposes CXL as a solution to overcome these limitations without the need for complete system redesigns. The firm also emphasized key-value cache optimization, which allows AI models to reuse previously processed data instead of recalculating it.
Samsung and AMD showcase joint CXL memory expansion demonstration
At the summit, Samsung and AMD jointly demonstrated a CXL-based memory expansion solution. This technology enables processors to share memory resources and scale capacity flexibly across AI systems. Samsung reports that the solution has undergone validation in real system environments. The two companies signed a memorandum of understanding in March 2026 to collaborate on next-generation AI memory and computing technologies. Moreover, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss cooperation in memory and foundry sectors.
Samsung also showcased CMM-D, its CXL-based DRAM memory module designed for memory pooling configurations. This setup connects multiple CXL memory units into a shared pool, allowing various systems to access resources as needed. Other exhibits included processing-in-memory technology, which performs some computations within memory chips to reduce data transfer volumes. Samsung displayed 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also featured among the displays.
Early access for partners to memory validation tools
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, discussed the strategy. He emphasized that expanding memory capacity and bandwidth is increasingly vital as AI models become larger and inference demands intensify. Shim noted that Samsung is intensifying co-design and technical validation efforts with global partners from the early development stages. This approach aims to ensure that memory products align with customer system needs prior to commercial release.
Samsung MAX Lab supports this initiative by providing customers with the opportunity to test memory and storage solutions under real AI workloads. This allows for validation of emerging technologies such as PIM and next-generation SSDs before they reach the market. The company attended the summit as a Diamond Sponsor of the Open Compute Project event. This appearance follows Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to position memory capacity as a central element of AI infrastructure performance.